Enhanced Electron Mobility Due to Dopant-Defect Pairing in...

Advanced Functional Materials 2014 / 05 Vol. 24; Iss. 19

Enhanced Electron Mobility Due to Dopant-Defect Pairing in Conductive ZnMgO

Ke, Yi, Lany, Stephan, Berry, Joseph J., Perkins, John D., Parilla, Philip A., Zakutayev, Andriy, Ohno, Tim, O'Hayre, Ryan, Ginley, David S.
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Volume:
24
Language:
english
Journal:
Advanced Functional Materials
DOI:
10.1002/adfm.201303204
Date:
May, 2014
File:
PDF, 852 KB
english, 2014
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