Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al 2 O 3
Hite, Jennifer K., Garces, Nelson Y., Goswami, Ramasis, Mastro, Michael A., Kub, Fritz J., Eddy, Charles R.Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.025502
Date:
February, 2014
File:
PDF, 1002 KB
english, 2014