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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V
Yu, Xin-Xin, Ni, Jin-Yu, Li, Zhong-Hui, Kong, Cen, Zhou, Jian-Jun, Dong, Xun, Pan, Lei, Kong, Yue-Chan, Chen, Tang-ShengVolume:
31
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/31/3/037201
Date:
March, 2014
File:
PDF, 764 KB
english, 2014