Modeling of 10-nm-scale ballistic MOSFET's

IEEE Electron Device Letters 2000 / 05 Vol. 21; Iss. 5

Modeling of 10-nm-scale ballistic MOSFET's

Naveh, Y., Likharev, K.K.
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.841309
Date:
May, 2000
File:
PDF, 113 KB
english, 2000
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