Dielectric properties of heavily doped crystalline and...

Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV

Aspnes, D. E., Studna, A. A., Kinsbron, E.
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Volume:
29
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.29.768
Date:
January, 1984
File:
PDF, 1.71 MB
english, 1984
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