Ultrascaled InAlN/GaN High Electron Mobility Transistors...

Japanese Journal of Applied Physics 2013 / 08 Vol. 52; Iss. 8S

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yue, Yuanzheng, Hu, Zongyang, Guo, Jia, Sensale-Rodriguez, Berardi, Li, Guowang, Wang, Ronghua, Faria, Faiza, Song, Bo, Gao, Xiang, Guo, Shiping, Kosel, Thomas, Snider, Gregory, Fay, Patrick, Jena, De
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.08JN14
Date:
August, 2013
File:
PDF, 753 KB
english, 2013
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