Atomic mixing effects on high fluence Ge implantation into...

Nuclear Instruments and Methods in Physics Research 1982 Vol. 194; Iss. 1-3

Atomic mixing effects on high fluence Ge implantation into Si at 40 keV

A. Gras-Marti, J.J. Jimenez-Rodriguez, J. Peon-Fernandez, M. Rodriguez-Vidal, N.P. Tognetti, G. Carter, M.J. Nobes, D.G. Armour
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Volume:
194
Year:
1982
Language:
english
Pages:
3
DOI:
10.1016/0029-554x(82)90562-6
File:
PDF, 190 KB
english, 1982
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