Improved L-gate 4H-SiC MESFETs with partial p-type spacer

Materials Science in Semiconductor Processing 2013 / 4 Vol. 16; Iss. 2

Improved L-gate 4H-SiC MESFETs with partial p-type spacer

Jia, Hujun, Yang, Yintang, Zhang, Hu
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Volume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2012.09.014
Date:
April, 2013
File:
PDF, 593 KB
english, 2013
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