Ultralow temperature ramping rate of LT to HT for the...

Applied Surface Science 2014 / 04 Vol. 299

Ultralow temperature ramping rate of LT to HT for the growth of high quality Ge epilayer on Si (100) by RPCVD

Chen, Da, Xue, Zhongying, Wei, Xing, Wang, Gang, Ye, Lin, Zhang, Miao, Wang, Dewang, Liu, Su
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
299
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2014.01.147
Date:
April, 2014
File:
PDF, 1.56 MB
english, 2014
Conversion to is in progress
Conversion to is failed