Interfacial thermal stability and band alignment of...

Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition

Wei, H.H., He, G., Chen, X.S., Cui, J.B., Zhang, M., Chen, H.S., Sun, Z.Q.
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Volume:
591
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2013.12.152
Date:
April, 2014
File:
PDF, 1.85 MB
english, 2014
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