![](/img/cover-not-exists.png)
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition
Wei, H.H., He, G., Chen, X.S., Cui, J.B., Zhang, M., Chen, H.S., Sun, Z.Q.Volume:
591
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2013.12.152
Date:
April, 2014
File:
PDF, 1.85 MB
english, 2014