TCAD models of the temperature and doping dependence of the...

Microelectronic Engineering 2014 / 3 Vol. 116

TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Stefanakis, Dionysios, Zekentes, Konstantinos
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Volume:
116
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.10.002
Date:
March, 2014
File:
PDF, 2.12 MB
english, 2014
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