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Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane
Latha, H.K.E., Udayakumar, A., Prasad, V. SiddeswaraVolume:
29
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.12.017
Date:
January, 2015
File:
PDF, 2.93 MB
english, 2015