Improvement of Ohmic contacts to n-type GaN using a Ti/Al...

Materials Science in Semiconductor Processing 2015 / 01 Vol. 29

Improvement of Ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme

Pang, Liang, (Kevin) Kim, Kyekyoon
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Volume:
29
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.10.011
Date:
January, 2015
File:
PDF, 2.60 MB
english, 2015
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