Capacitance characterization of tapered through-silicon-via...

Microelectronics Journal 2014 / 02 Vol. 45; Iss. 2

Capacitance characterization of tapered through-silicon-via considering MOS effect

Wang, Fengjuan, Zhu, Zhangming, Yang, Yintang, Liu, Xiaoxian, Ding, Ruixue
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Volume:
45
Language:
english
Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2013.10.015
Date:
February, 2014
File:
PDF, 944 KB
english, 2014
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