Analytical temperature dependent model for nanoscale...

Solid-State Electronics 2014 / 08 Vol. 98

Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models

Cheralathan, Muthupandian, Sampedro, Carlos, Gámiz, Francisco, Iñiguez, Benjamin
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Volume:
98
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.04.008
Date:
August, 2014
File:
PDF, 541 KB
english, 2014
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