Effects of InAlAs strain reducing layer on the...

Thin Solid Films 2014 / 07 Vol. 562

Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

Kong, Lingmin, Sun, Wei, Feng, Zhe Chuan, Xie, Sheng, Zhou, Yunqing, Wang, Rui, Zhang, Cunxi, Zong, Zhaocun, Wang, Hongxia, Qiao, Qian, Wu, Zhengyun
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Volume:
562
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2014.03.048
Date:
July, 2014
File:
PDF, 494 KB
english, 2014
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