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Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots
Yun, Dong Yeol, Park, Hun Min, Kim, Sung Woo, Kim, Sang Wook, Kim, Tae WhanVolume:
75
Language:
english
Journal:
Carbon
DOI:
10.1016/j.carbon.2014.03.059
Date:
August, 2014
File:
PDF, 1.16 MB
english, 2014