Characterization of deep electron traps in 4H-SiC Junction...

Solid-State Electronics 2014 / 04 Vol. 94

Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

Gelczuk, Ł., Dąbrowska-Szata, M., Sochacki, M., Szmidt, J.
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Volume:
94
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.02.008
Date:
April, 2014
File:
PDF, 614 KB
english, 2014
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