Ion beam studies of Hafnium based alternate high-k...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2014 / 08 Vol. 332

Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon

Manikanthababu, N., Chan, T.K., Pathak, A.P., Devaraju, G., Srinivasa Rao, N., Yang, P., Breese, M.B.H., Osipowicz, T., Nageswara Rao, S.V.S.
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Volume:
332
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2014.02.103
Date:
August, 2014
File:
PDF, 823 KB
english, 2014
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