Characterization of damage behavior induced by...

Vacuum 2013 / 3 Vol. 89

Characterization of damage behavior induced by low-temperature BGe molecular ion implantation in silicon

Liang, J.H., Wu, C.H.
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Volume:
89
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2011.11.018
Date:
March, 2013
File:
PDF, 430 KB
english, 2013
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