Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate
Biswas, Abhijit, Bhattacherjee, SwagataVolume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.03.009
Date:
August, 2014
File:
PDF, 705 KB
english, 2014