Structural defects in (100) 3C-SiC heteroepitaxy: Influence...

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Severino, A., Frewin, C., Bongiorno, C., Anzalone, R., Saddow, S.E., La Via, F.
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Volume:
18
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2009.09.012
Date:
December, 2009
File:
PDF, 1.20 MB
english, 2009
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