Photodiode properties of molecular beam epitaxial InSb on a...

Infrared Physics & Technology 2014 / 1 Vol. 62

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.
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Volume:
62
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2013.11.010
Date:
January, 2014
File:
PDF, 743 KB
english, 2014
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