The influence of pressure on growth of 3C-SiC...

Journal of Crystal Growth 2014 / 09 Vol. 401

The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates

Teklinska, Dominika, Grodecki, Kacper, Jozwik-Biała, Iwona, Caban, Piotr, Olszyna, Andrzej, Strupinski, Wlodek
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Volume:
401
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.11.087
Date:
September, 2014
File:
PDF, 5.36 MB
english, 2014
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