Fabrication and properties of lateral p–i–p structures...

Diamond and Related Materials 2003 / 9 Vol. 12; Iss. 9

Fabrication and properties of lateral p–i–p structures using single-crystalline CVD diamond layers for high electric field applications

Irie, M., Endo, S., Wang, C.L., Ito, T.
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Volume:
12
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(03)00243-7
Date:
September, 2003
File:
PDF, 511 KB
english, 2003
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