Cause of the fill factor loss of a-Si:H p–i–n devices with...

Thin Solid Films 2013 / 12 Vol. 548

Cause of the fill factor loss of a-Si:H p–i–n devices with ZnO:Al front electrode: Blocking contact vs. defect density

Santos, J.D., Fernández, S., Cárabe, J., Gandía, J.J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
548
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.09.078
Date:
December, 2013
File:
PDF, 757 KB
english, 2013
Conversion to is in progress
Conversion to is failed