Regrowth kinetics of amorphous Ge layers created by 74Ge...

Solid State Communications 1977 Vol. 21; Iss. 11

Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

L. Csepregi, R.P. Küllen, J.W. Mayer, T.W. Sigmon
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Volume:
21
Year:
1977
Language:
english
Pages:
3
DOI:
10.1016/0038-1098(77)90009-6
File:
PDF, 293 KB
english, 1977
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