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RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films
Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, HyunchulVolume:
112
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.05.014
Date:
December, 2013
File:
PDF, 1.41 MB
english, 2013