AlGaN/GaN HEMT Based Hydrogen Sensors With Gate Absorption...

Procedia Engineering 2012 Vol. 47

AlGaN/GaN HEMT Based Hydrogen Sensors With Gate Absorption Layers Formed by High Temperature Oxidation

Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinský, L., Plecenik, T.
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Volume:
47
Year:
2012
Language:
english
Journal:
Procedia Engineering
DOI:
10.1016/j.proeng.2012.09.198
File:
PDF, 813 KB
english, 2012
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