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Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy
Guy, O.J., Doneddu, D., Chen, L., Jennings, M.R., Ackland, M.P., Baylis, R., Holton, M.D., Dunstan, P., Wilks, S.P., Mawby, P.A.Volume:
15
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2005.11.010
Date:
September, 2006
File:
PDF, 287 KB
english, 2006