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Thermal energy depth of electron traps in the SiO2 layer of the ion-implanted MOS structure
M. Marczewski, I. Strza⌈kowski, M. Kowalski, H. Dra̧żykVolume:
49
Year:
1984
Language:
english
Pages:
3
DOI:
10.1016/0038-1098(84)90305-3
File:
PDF, 208 KB
english, 1984