Basic model of absorption depth and injection levels in silicon under intermediate illumination levels
Aharoni, Ran, Sinvani, Moshe, Tischler, Yaakov R., Zalevsky, ZeevVolume:
291
Language:
english
Journal:
Optics Communications
DOI:
10.1016/j.optcom.2012.10.061
Date:
March, 2013
File:
PDF, 493 KB
english, 2013