Basic model of absorption depth and injection levels in...

Basic model of absorption depth and injection levels in silicon under intermediate illumination levels

Aharoni, Ran, Sinvani, Moshe, Tischler, Yaakov R., Zalevsky, Zeev
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Volume:
291
Language:
english
Journal:
Optics Communications
DOI:
10.1016/j.optcom.2012.10.061
Date:
March, 2013
File:
PDF, 493 KB
english, 2013
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