Energy relaxation of warm electrons in (100)-Si-MOSFETs...

Solid State Communications 1984 Vol. 51; Iss. 9

Energy relaxation of warm electrons in (100)-Si-MOSFETs under substrate bias

W. Hönlein, G. Landwehr
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Volume:
51
Year:
1984
Language:
english
Pages:
5
DOI:
10.1016/0038-1098(84)90946-3
File:
PDF, 343 KB
english, 1984
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