Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
Cheng, Yan, Zhan, Teng, Ma, Jun, Zhang, Lian, Si, Zhao, Yi, Xiaoyan, Wang, Guohong, Li, JinminVolume:
17
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.09.004
Date:
January, 2014
File:
PDF, 1.39 MB
english, 2014