Study of the accumulation layer and charge losses at the...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2013 / 9 Vol. 721

Study of the accumulation layer and charge losses at the Si–SiO2 interface in p+n-silicon strip sensors

Poehlsen, Thomas, Becker, Julian, Fretwurst, Eckhart, Klanner, Robert, Schwandt, Joern, Zhang, Jiaguo
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Volume:
721
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
DOI:
10.1016/j.nima.2013.04.026
Date:
September, 2013
File:
PDF, 2.24 MB
english, 2013
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