Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique
T. Bretagnon, A. Jean, G. Arnaud, G. BastideVolume:
74
Year:
1990
Language:
english
Pages:
4
DOI:
10.1016/0038-1098(90)90176-c
File:
PDF, 286 KB
english, 1990