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Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization
Kern, R.S., Järrendahl, K., Tanaka, S., Davis, R.F.Volume:
6
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(97)00066-6
Date:
August, 1997
File:
PDF, 1.17 MB
english, 1997