Valence-band lineups at highly strained SiInP, GeInAs,...

Valence-band lineups at highly strained SiInP, GeInAs, and SiGe interfaces

San-huang Ke, Ren-zhi Wang, Mei-chun Huang
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Volume:
93
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0038-1098(94)00888-4
File:
PDF, 452 KB
english, 1995
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