Density of gap states in amorphous hydrogenated silicon carbide determined using high-frequency capacitance-voltage measurement technique
Chew, K, Rusli,, Yu, M.B, Yoon, S.F, Ligatchev, V, Ahn, JVolume:
10
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(00)00362-9
Date:
March, 2001
File:
PDF, 129 KB
english, 2001