Properties of n type Ge-doped epitaxial GaAs layers grown...

Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts

A.M. Andrews, N. Holonyak Jr.
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Volume:
15
Year:
1972
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(72)90001-9
File:
PDF, 440 KB
english, 1972
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