Control of relative etch rates of SiO2 and Si in plasma...

Control of relative etch rates of SiO2 and Si in plasma etching

Rudolf A.H. Heinecke
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Volume:
18
Year:
1975
Language:
english
Pages:
2
DOI:
10.1016/0038-1101(75)90184-7
File:
PDF, 148 KB
english, 1975
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