![](/img/cover-not-exists.png)
Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
Ronald K. Raymond, Mukunda B. DasVolume:
19
Year:
1976
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(76)90162-3
File:
PDF, 949 KB
english, 1976