Measurement of carrier lifetime in the base of bipolar...

Measurement of carrier lifetime in the base of bipolar transistors by means of transient secondary photocurrents

Danielle Bielle-Daspet, Mohammed Benzohra, Yan Gervais de Lafond
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Volume:
21
Year:
1978
Language:
english
Pages:
3
DOI:
10.1016/0038-1101(78)90319-2
File:
PDF, 263 KB
english, 1978
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