A low active and leakage power SRAM using a read and write divided and BIST programmable timing control circuit
Zhu, Jiafeng, Bai, Na, Wu, JianhuiVolume:
44
Language:
english
Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2013.02.009
Date:
April, 2013
File:
PDF, 1.05 MB
english, 2013