Study of electron traps in the thin interfacial oxide layer...

Solid-State Electronics 1982 Vol. 25; Iss. 11

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon
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Volume:
25
Year:
1982
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(82)90146-0
File:
PDF, 422 KB
english, 1982
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