Influence of the dopant density profile on minority-carrier...

Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices

Andrés Cuevas, Jerry G. Fossum, Rosa T. Young
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Volume:
28
Year:
1985
Language:
english
Pages:
8
DOI:
10.1016/0038-1101(85)90005-x
File:
PDF, 739 KB
english, 1985
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