Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices
Andrés Cuevas, Jerry G. Fossum, Rosa T. YoungVolume:
28
Year:
1985
Language:
english
Pages:
8
DOI:
10.1016/0038-1101(85)90005-x
File:
PDF, 739 KB
english, 1985