Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures
A. Nannini, P.E. Bagnoli, A. Diligenti, V. CiutiVolume:
28
Year:
1985
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(85)90077-2
File:
PDF, 467 KB
english, 1985