As2-ambient activation and alloyed-ohmic-contact studies of Si+-ion-implanted Al0.3Ga0.7As/GaAs modulation-doped structures
S.D. Mukherjee, P. Zwicknagl, H. Lee, L. Rathbun, L.F. EastmanVolume:
29
Year:
1986
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(86)90037-7
File:
PDF, 1.16 MB
english, 1986