Step-controlled homoepitaxial growth of 4H–SiC on vicinal...

Journal of Crystal Growth 2013 / 10 Vol. 381

Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

Kallinger, Birgit, Berwian, Patrick, Friedrich, Jochen, Thomas, Bernd
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Volume:
381
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.07.024
Date:
October, 2013
File:
PDF, 930 KB
english, 2013
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