![](/img/cover-not-exists.png)
The separation of the generation components in an MOS capacitor made with photo-induced CVD oxide deposited at 80°C
Yosi Shacham-DiamandVolume:
31
Year:
1988
Language:
english
Pages:
3
DOI:
10.1016/0038-1101(88)90072-x
File:
PDF, 319 KB
english, 1988